Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device

ABSTRACT

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm 3  and equal to or lower than 7.1 g/cm 3 , a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.

TECHNICAL FIELD

The present invention relates to an oxide sintered body suitably used asa sputtering target for forming an oxide semiconductor film by asputtering method, a method for manufacturing the oxide sintered body, asputtering target including the oxide sintered body, and a semiconductordevice including the oxide semiconductor film formed by the sputteringmethod with the sputtering target.

BACKGROUND ART

In a liquid crystal display device, a thin-film EL (electroluminescence)display device, an organic EL display device or the like, an amorphoussilicon film has been conventionally mainly used as a semiconductor filmthat functions as a channel layer of a TFT (thin-film transistor) whichis a semiconductor device.

In recent years, however, attention has been focused on an oxidesemiconductor film mainly composed of an In—Ga—Zn-based composite oxide(hereinafter also referred to as “IGZO”) as the aforementionedsemiconductor film, because of the advantage of higher carrier mobilityas compared with the amorphous silicon film.

For example, Japanese Patent Laying-Open No. 2008-199005 (PTD 1)discloses that this oxide semiconductor film mainly composed of IGZO isformed by a sputtering method by using an oxide sintered body as atarget.

In addition, Japanese Patent Laying-Open No. 2008-192721 (PTD 2)discloses that a channel layer is formed by a sputtering method by usinga target including titanium or tungsten and indium, and thus, a TFThaving excellent operating characteristics is obtained.

In addition, as a material suitably used when forming an oxidetransparent electroconductive film by a vacuum vapor deposition methodsuch as an electron beam vapor deposition method, an ion plating methodand a high-density plasma-assisted vapor deposition method, JapanesePatent Laying-Open No. 2006-347807 (PTD 3) discloses an oxide sinteredbody including indium oxide having tungsten solid-dissolved therein,including tungsten with a ratio of atomic number of tungsten to indiumbeing equal to or higher than 0.001 and equal to or lower than 0.034,and having a density (apparent density) of equal to or higher than 4.0g/cm³ and equal to or lower than 6.5 g/cm³.

CITATION LIST Patent Document

-   PTD 1: Japanese Patent Laying-Open No. 2008-199005-   PTD 2: Japanese Patent Laying-Open No. 2008-192721-   PTD 3: Japanese Patent Laying-Open No. 2006-347807

SUMMARY OF INVENTION Technical Problem

In the TFT (thin-film transistor) which is the semiconductor deviceincluding, as the channel layer, the oxide semiconductor film mainlycomposed of IGZO as disclosed in Japanese Patent Laying-Open No.2008-199005 (PTD 1), gallium oxide made of metal gallium which is highin market price is used as a raw material, and thus, the TFT had aproblem of high manufacturing cost.

The TFT including, as the channel layer, the oxide semiconductor filmfabricated by using the target disclosed in Japanese Patent Laying-OpenNo. 2008-192721 (PTD 2) had a problem that an OFF current is high, i.e.,approximately 1×10⁻¹¹ A, and thus, a ratio of an ON current to the OFFcurrent cannot be sufficiently increased unless a driving voltage israised to approximately 40 V.

The oxide sintered body disclosed in Japanese Patent Laying-Open No.2006-347807 (PTD 3) had a problem that the density (apparent density) islow, i.e., equal to or lower than 6.5 g/cm³, and thus, the oxidesintered body cannot be used as a sputtering target for the sputteringmethod which is an optimum method for forming the oxide semiconductorfilm.

Thus, an object of the present invention is to solve the aforementionedproblems and provide an oxide sintered body that can be suitably used asa sputtering target for forming an oxide semiconductor film of asemiconductor device having high characteristics by a sputtering method,a method for manufacturing the oxide sintered body, a sputtering targetincluding the oxide sintered body, and a semiconductor device includingthe oxide semiconductor film formed by the sputtering method by usingthe sputtering target.

Solution to Problem

An oxide sintered body according to an aspect of the present inventionis an oxide sintered body including indium, tungsten and zinc, whereinthe oxide sintered body includes a bixbite type crystal phase as a maincomponent and has an apparent density of higher than 6.5 g/cm³ and equalto or lower than 7.1 g/cm³, a content rate of tungsten to a total ofindium, tungsten and zinc in the oxide sintered body is higher than 1.2atomic % and lower than 30 atomic %, and a content rate of zinc to thetotal of indium, tungsten and zinc in the oxide sintered body is higherthan 1.2 atomic % and lower than 30 atomic %.

A sputtering target according to another aspect of the present inventionincludes the oxide sintered body according to the aforementioned aspect.

A semiconductor device according to still another aspect of the presentinvention includes an oxide semiconductor film formed by a sputteringmethod with the sputtering target according to the aforementionedaspect.

A method for manufacturing an oxide sintered body according to a furtheraspect of the present invention is a method for manufacturing the oxidesintered body according to the aforementioned aspect, the methodincluding the steps of preparing a primary mixture of a zinc oxidepowder and a tungsten oxide powder; forming a calcined powder byheat-treating the primary mixture; preparing a secondary mixture of rawmaterial powders, wherein the secondary mixture includes the calcinedpowder; forming a molded body by molding the secondary mixture; andforming the oxide sintered body by sintering the molded body, whereinthe step of forming a calcined powder includes forming a complex oxidepowder including zinc and tungsten as the calcined powder byheat-treating the primary mixture at a temperature equal to or higherthan 550° C. and lower than 1200° C. under an oxygen-containingatmosphere.

Advantageous Effects of Invention

According to the foregoing, there can be provided an oxide sintered bodythat can be suitably used as a sputtering target for forming an oxidesemiconductor film of a semiconductor device having high characteristicsby a sputtering method, a method for manufacturing the oxide sinteredbody, a sputtering target including the oxide sintered body, and asemiconductor device including the oxide semiconductor film formed bythe sputtering method with the sputtering target.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic view showing one example of a semiconductor deviceaccording to one aspect of the present invention, in which FIG. 1(A)shows a schematic plan view and FIG. 1(B) shows a schematiccross-sectional view taken along line IB-IB shown in FIG. 1(A).

FIG. 2 is a schematic cross-sectional view showing one example of amethod for manufacturing the semiconductor device according to oneaspect of the present invention.

DESCRIPTION OF EMBODIMENTS Description of Embodiments of the PresentInvention

[1] An oxide sintered body which is an embodiment of the presentinvention is an oxide sintered body including indium, tungsten and zinc,wherein the oxide sintered body includes a bixbite type crystal phase asa main component and has an apparent density of higher than 6.5 g/cm³and equal to or lower than 7.1 g/cm³. Since the oxide sintered body ofthe present embodiment includes a bixbite type crystal phase as a maincomponent and has an apparent density of higher than 6.5 g/cm³ and equalto or lower than 7.1 g/cm³, the oxide sintered body of the presentembodiment is suitably used as a sputtering target for forming an oxidesemiconductor film of a semiconductor device having high characteristicsby a sputtering method.

In the oxide sintered body of the present embodiment, a content rate oftungsten to a total of indium, tungsten and zinc in the oxide sinteredbody is higher than 12 atomic % and lower than 30 atomic %, and acontent rate of zinc to the total of indium, tungsten and zinc in theoxide sintered body is higher than 1.2 atomic % and lower than 30 atomic%. As a result, in the semiconductor device including, as a channellayer, the oxide semiconductor film formed by using the sputteringtarget including the aforementioned oxide sintered body, a ratio of theON current to the OFF current can be increased at low driving voltage.

[2] In the oxide sintered body of the present embodiment, the bixbitetype crystal phase may include indium oxide as a main component, andinclude tungsten and zinc solid-dissolved in at least a part of thebixbite type crystal phase. As a result, in the semiconductor deviceincluding, as a channel layer, the oxide semiconductor film formed byusing the sputtering target including the aforementioned oxide sinteredbody, a ratio of the ON current to the OFF current can be increased atlow driving voltage.

[3] The oxide sintered body of the present embodiment may furtherinclude at least one type of element selected from the group consistingof aluminum, titanium, chromium, gallium, hafnium, zirconium, silicon,molybdenum, vanadium, niobium, tantalum, and bismuth. In this case, acontent rate of the element to a total of indium, tungsten, zinc, andthe element in the oxide sintered body may be equal to or higher than0.1 atomic % and equal to or lower than 10 atomic %. As a result, in thesemiconductor device including, as a channel layer, the oxidesemiconductor film formed by using the sputtering target including theaforementioned oxide sintered body, a ratio of the ON current to the OFFcurrent can be increased at low driving voltage.

[4] When the oxide sintered body of the present embodiment includes theaforementioned element, an atomic ratio (ratio of atomic number) ofsilicon to indium in the oxide sintered body may be lower than 0.007. Asa result, an electric resistivity of the oxide semiconductor film formedby using the sputtering target including the aforementioned oxidesintered body can be increased.

[5] When the oxide sintered body of the present embodiment includes theaforementioned element, an atomic ratio (ratio of atomic number) oftitanium to indium in the oxide sintered body may be lower than 0.004.As a result, an electric resistivity of the oxide semiconductor filmformed by using the sputtering target including the aforementioned oxidesintered body can be increased.

[6] The oxide sintered body of the present embodiment may includetungsten having at least one of valences of six and four. As a result,in the semiconductor device including, as a channel layer, the oxidesemiconductor film formed by using the sputtering target including theaforementioned oxide sintered body, a ratio of the ON current to the OFFcurrent can be increased at low driving voltage.

[7] The oxide sintered body of the present embodiment may includetungsten whose bonding energy measured by X-ray photoelectronspectroscopy is equal to or higher than 245 eV and equal to or lowerthan 250 eV. As a result, in the semiconductor device including, as achannel layer, the oxide semiconductor film formed by using thesputtering target including the aforementioned oxide sintered body, aratio of the ON current to the OFF current can be increased at lowdriving voltage.

[8] A sputtering target which is another embodiment of the presentinvention includes the oxide sintered body of the aforementionedembodiment. Since the sputtering target of the present embodimentincludes the oxide sintered body of the aforementioned embodiment, thesputtering target of the present embodiment is suitably used to form anoxide semiconductor film of a semiconductor device having highcharacteristics by a sputtering method.

[9] The semiconductor device which is still another embodiment of thepresent invention includes an oxide semiconductor film formed by asputtering method with the sputtering target of the aforementionedembodiment. Since the semiconductor device of the present embodimentincludes an oxide semiconductor film formed by a sputtering method withthe sputtering target of the aforementioned embodiment, thesemiconductor device of the present embodiment can exhibit highcharacteristics. Although the semiconductor device described herein isnot particularly limited, a TUFT (thin-film transistor) including, as achannel layer, the oxide semiconductor film formed by the sputteringmethod with the sputtering target of the aforementioned embodiment is asuitable example.

[10] In the semiconductor device of the present embodiment, a contentrate of tungsten to a total of indium, tungsten and zinc in the oxidesemiconductor film may be higher than 1.2 atomic % and lower than 30atomic %, and a content rate of zinc to the total of indium, tungstenand zinc in the oxide semiconductor film may be higher than 1.2 atomic %and lower than 30 atomic %. As a result, in the semiconductor deviceincluding the oxide semiconductor film as a channel layer, a ratio ofthe ON current to the OFF current can be increased at low drivingvoltage.

[11] in the semiconductor device of the present embodiment, an atomicratio of tungsten to zinc in the oxide semiconductor film may be higherthan 0.5 and lower than 3.0. As a result, in the semiconductor deviceincluding the oxide semiconductor film as a channel layer, a ratio ofthe ON current to the OFF current can be increased at low drivingvoltage.

[12] In the semiconductor device of the present embodiment, an atomicratio of silicon to indium in the oxide semiconductor film may be lowerthan 0.007. As a result, an electric resistivity of the oxidesemiconductor film can be increased to be equal to or higher than 1×10²Ωcm.

[13] In the semiconductor device of the present embodiment, an atomicratio of titanium to indium in the oxide semiconductor film may be lowerthan 0.004. As a result, an electric resistivity of the oxidesemiconductor film can be increased to be equal to or higher than 1×10²Ωcm.

[14] In the semiconductor device of the present embodiment, the oxidesemiconductor film may include tungsten having at least one of valencesof six and four. As a result, in the semiconductor device including theoxide semiconductor film as a channel layer, a ratio of the ON currentto the OFF current can be increased at low driving voltage.

[15] In the semiconductor device of the present embodiment, the oxidesemiconductor film may include tungsten whose bonding energy measured byX-ray photoelectron spectroscopy is equal to or higher than 245 eV andequal to or lower than 250 eV. As a result, in the semiconductor deviceincluding the oxide semiconductor film as a channel layer, a ratio ofthe ON current to the OFF current can be increased at low drivingvoltage.

[16] A method for manufacturing an oxide sintered body which is afurther embodiment of the present invention is a method formanufacturing the oxide sintered body of the aforementioned embodiment,the method including the steps of: preparing a primary mixture of a zincoxide powder and a tungsten oxide powder; forming a calcined powder byheat-treating the primary mixture; preparing a secondary mixture of rawmaterial powders, wherein the secondary mixture includes the calcinedpowder; forming a molded body by molding the secondary mixture; andforming the oxide sintered body by sintering the molded body, whereinthe step of forming a calcined powder includes forming a complex oxidepowder including zinc and tungsten as the calcined powder byheat-treating the primary mixture at a temperature equal to or higherthan 550° C. and lower than 1200° C. under an oxygen-containingatmosphere. According to the method for manufacturing the oxide sinteredbody of the present embodiment, the step of forming a calcined powderincludes forming a complex oxide powder including zinc and tungsten bymixing the zinc oxide powder and the tungsten oxide powder, andheat-treating the mixture at a temperature equal to or higher than 550°C. and lower than 1200° C. under an oxygen-containing atmosphere, andthus, an apparent density of the oxide sintered body is increased andthe oxide sintered body that can be suitably used as a sputtering targetis obtained.

[17] In the method for manufacturing the oxide sintered body of thepresent embodiment, the tungsten oxide powder may include at least onetype of crystal phase selected from the group consisting of a WO₃crystal phase, a WO₂ crystal phase and a WO_(2.72) crystal phase. As aresult, an apparent density of the oxide sintered body is increased andthe oxide sintered body that can be suitably used as a sputtering targetis obtained.

[18] In the method for manufacturing the oxide sintered body of thepresent embodiment, a median particle size d50 of the tungsten oxidepowder may be equal to or larger than 0.1 μm and equal to or smallerthan 4 μm. As a result, an apparent density of the oxide sintered bodyis increased and the oxide sintered body that can be suitably used as asputtering target is obtained.

[19] In the method for manufacturing the oxide sintered body of thepresent embodiment, the complex oxide may include a ZnWO₄ type crystalphase. As a result, an apparent density of the oxide sintered body isincreased and the oxide sintered body that can be suitably used as asputtering target is obtained.

DETAILS OF EMBODIMENTS OF THE PRESENT INVENTION First Embodiment: OxideSintered Body

An oxide sintered body of the present embodiment is an oxide sinteredbody including indium, tungsten and zinc, wherein the oxide sinteredbody includes a bixbite type crystal phase as a main component and hasan apparent density of higher than 6.5 g/cm³ and equal to or lower than7.1 g/cm³. Since the oxide sintered body of the present embodimentincludes a bixbite type crystal phase as a main component and has anapparent density of higher than 6.5 g/cm³ and equal to or lower than 7.1g/cm³, the oxide sintered body of the present embodiment is suitablyused as a sputtering target for forming an oxide semiconductor film of asemiconductor device having high characteristics by a sputtering method.

In the present specification, “bixbite type crystal phase” is a genericterm for a bixbite crystal phase as well as a phase including the samecrystal structure as that of the bixbite crystal phase, in which atleast one element of silicon (Si) and a metal element other than indium(In) is included in at least a part of the bixbite crystal phase. Thebixbite crystal phase is one of the crystal phases of indium oxide(In₂O₃) and refers to a crystal structure defined in 6-0416 of the JCPDScard, and is also called “rare-earth oxide C type phase (or C-rare earthstructure phase)”.

The bixbite type crystal phase can be identified by X-ray diffraction.Namely, by the X-ray diffraction, the presence of the bixbite typecrystal phase can be identified and lattice spacing can be measured.

In addition, “includes a bixbite type crystal phase as a main component”refers to the case in which a ratio of the bixbite type crystal phase inthe oxide sintered body (an occupancy rate of the bixbite type crystalphase described below) is equal to or higher than 90%. The oxidesintered body may sometimes include the other crystal phases such as aninclusion-unavoidable crystal phase. A method for distinguishing thebixbite type crystal phase from the crystal phases other than thebixbite type crystal phase is as follows.

First, the presence of the bixbite type crystal phase and the presenceof the crystal phases other than the bixbite type crystal phase areidentified by the X-ray diffraction. In some cases, only the bixbitetype crystal phase is identified by the X-ray diffraction. When only thebixbite type crystal phase is identified, it is determined that thebixbite type crystal phase is a main component.

When the presence of the bixbite type crystal phase and the presence ofthe crystal phases other than the bixbite type crystal phase areidentified by the X-ray diffraction, a sample is obtained from a part ofthe oxide sintered body and a surface of the sample is polished to makethe surface smooth. Then, by using SEM-EDX (scanning secondary electronmicroscope with an energy-dispersive X-ray fluorescence spectrometer),the surface of the sample is observed by an SEM (scanning secondaryelectron microscope) and a composition ratio of the metal elements ofthe respective crystal particles is analyzed by an EDX(energy-dispersive X-ray fluorescence spectrometer). The crystalparticles are grouped in accordance with a tendency of the compositionratio of the metal elements of these crystal particles. Specifically,the crystal particles can be divided into a group of the crystalparticles having a high Zn content rate or having a high W content rateor having a high Zn content rate and a high W content rate, and a groupof the crystal particles having a very low Zn content rate and a verylow W content rate and having a high In content rate. The group of thecrystal particles having a high Zn content rate or having a high Wcontent rate or having a high Zn content rate and a high W content rateis concluded as the other crystal phases, and the group of the crystalparticles having a very low Zn content rate and a very low W contentrate and having a high In content rate is concluded as the In₂O₃ typephase which is the bixbite type crystal phase.

The occupancy rate of the bixbite type crystal phase in the oxidesintered body is defined as a ratio (percentage) of an area of thebixbite type crystal phase to the aforementioned measured surface of theoxide sintered body. Therefore, the oxide sintered body of the presentembodiment is mainly composed of the bixbite type crystal phase and theoccupancy rate of the bixbite type crystal phase defined above is equalto or higher than 90%.

In addition, the oxide sintered body of the present embodiment has anapparent density of higher than 6.5 g/cm³ and equal to or lower than 7.1g/cm³. In contrast, the oxide sintered body disclosed in Japanese PatentLaying-Open No. 2006-347807 has an apparent density of equal to orhigher than 4.0 g/cm³ and equal to or lower than 6.5 g/cm³, and thus,the apparent density of the sintered body is lower than that of theoxide sintered body or the present embodiment.

Considering that a theoretical density of a bixbite crystal phase madeof indium oxide is 7.28 g/cm³ and that each of tungsten and zinc aresolid-dissolved in a substitutional-type manner in at least a part ofthe bixbite crystal phase at a ratio ranging from 1.2 atomic % to 30atomic %, a theoretical density of the bixbite type crystal phase whichis the main component of the oxide sintered body of the presentembodiment is considered to be 7.19 g/cm³ at minimum and 7.24 g/cm³ atmaximum. Then, a percentage of the apparent density of the sintered bodyto the theoretical density, i.e., a relative density of the sinteredbody is low, i.e., equal to or higher than 55.2% and equal to or lowerthan 90.4% in the case of the oxide sintered body disclosed in JapanesePatent Laying-Open No. 2006-347807, whereas the relative density isextremely high, i.e., higher than 90.4% and equal to or lower than 99.0%in the case of the oxide sintered body of the present embodiment.

In the case of using the sintered body as the sputtering target, ahigher apparent density of the sintered body is considered to bedesirable. A low apparent density of the sintered body means that thereare many vacancies in the sintered body. During use of the sputteringtarget, a surface thereof is etched by an argon ion. Therefore, if thereare vacancies in the sintered body, these vacancies are exposed and theinternal gas is released during film formation, and thus, the gasreleased from the target enters a deposited oxide semiconductor thinfilm and the film characteristics are degraded. Furthermore, if theapparent density of the sintered body is low, it is known that aninsulator of indium called “nodule” is generated on the target at thetime of film formation and thus good sputter discharge is inhibited.From this perspective as well, it is desired to increase the apparentdensity of the sintered body.

Namely, since the apparent density of the oxide sintered body of thepresent embodiment is high, i.e., higher than 6.5 g/cm³ and equal to orlower than 7.1 g/cm³, the oxide sintered body of the present embodimentis suitably used as the sputtering target for forming the oxidesemiconductor film of the semiconductor device having highcharacteristics by the sputtering method.

In the oxide sintered body of the present embodiment, a content rate oftungsten to a total of indium, tungsten and zinc in the oxide sinteredbody (hereinafter also referred to as “W content rate” in the oxidesintered body) is higher than 1.2 atomic % and lower than 30 atomic %,and a content rate of zinc to the total of indium, tungsten and zinc inthe oxide sintered body (hereinafter also referred to as “Zn contentrate” in the oxide sintered body) is higher than 1.2 atomic % and lowerthan 30 atomic %. According to this oxide sintered body, in thesemiconductor device (e.g., a TFT) including, as a channel layer, theoxide semiconductor film formed by using the oxide sintered body, aratio of the ON current to the OFF current can be increased at lowdriving voltage.

In addition, from the aforementioned perspective, the W content rate inthe oxide sintered body is preferably higher than 2.0 atomic % and lowerthan 15 atomic %, and more preferably higher than 4.0 atomic % and lowerthan 12 atomic %. In addition, from the aforementioned perspective, theZn content rate in the oxide sintered body is preferably higher than 2.0atomic % and lower than 15 atomic %, and more preferably higher than 4.0atomic % and lower than 12 atomic %.

If the W content rate in the oxide sintered body is equal to or lowerthan 1.2 atomic %, the OFF current increases and the ratio of the ONcurrent to the OFF current decreases in the semiconductor device (e.g.,a TFT) including, as a channel layer, the oxide semiconductor filmformed by using the oxide sintered body. If the W content rate in theoxide sintered body is equal to or higher than 30 atomic % the ONcurrent decreases or the ratio of the ON current to the OFF currentdecreases at low driving voltage in the semiconductor device including,as a channel layer, the oxide semiconductor film formed by using theoxide sintered body.

If the Zn content rate in the oxide sintered body is equal to or lowerthan 1.2 atomic %, the OFF current increases and the ratio of the ONcurrent to the OFF current decreases in the semiconductor deviceincluding, as a channel layer, the oxide semiconductor film formed byusing the oxide sintered body. If the Zn content rate in the oxidesintered body is equal to or higher than 30 atomic %, the ON currentdecreases or the ratio of the ON current to the OFF current decreases atlow driving voltage in the semiconductor device including, as a channellayer, the oxide semiconductor film formed by using the oxide sinteredbody.

In the oxide sintered body of the present embodiment, it is preferablethat the bixbite type crystal phase includes indium oxide as a maincomponent, and includes tungsten and zinc solid-dissolved in at least apart of the bixbite type crystal phase. According to this oxide sinteredbody, in the semiconductor device (e.g., a TFT) including, as a channellayer, the oxide semiconductor film formed by using the oxide sinteredbody, the ratio of the ON current to the OFF current can be increased atlow driving voltage.

In the oxide sintered body of the present embodiment, “the bixbite typecrystal phase includes indium oxide as a main component, and tungstenand zinc are solid-dissolved in at least a part thereof” refers to aconfiguration in which tungsten and zinc are solid-dissolved in asubstitutional-type manner in at least a part of a crystal lattice ofindium oxide having the bixbite crystal phase, or a configuration inwhich tungsten and zinc are solid-dissolved in an interstitial-typemanner in between the crystal lattices, or a configuration in whichtungsten and zinc are solid-dissolved in both a substitutional-typemanner and an interstitial-type manner.

In the oxide sintered body of the present embodiment, when tungsten andzinc are solid-dissolved in at least a part of the bixbite type crystalphase, the lattice spacing is wider or narrower than the lattice spacingdefined in 6-0416 of the JCPDS card. In the X-ray diffraction, a peakposition is shifted toward the high-angle side or shifted toward thelow-angle side. When this peak shift is seen and the presence of aregion where indium and tungsten and zinc are mixedly present is seen bysurface analysis with SEM-EDX (scanning secondary electron microscopewith an energy-dispersive X-ray fluorescence spectrometer) or TEM-EDX(transmission secondary electron microscope with an energy-dispersiveX-ray fluorescence spectrometer), it can be estimated that tungsten andzinc are solid-dissolved in the bixbite type crystal phase.

Alternatively, when the presence of zinc and tungsten is seen togetherwith indium as a result of identification of the present elements withthe ICP (inductively-coupled plasma) mass spectrometry, the SEM-EDX orthe other element identification methods, while an oxide of zinc, anoxide of tungsten, and a complex oxide of zinc and tungsten are not seenin the X-ray diffraction, it can also be determined that tungsten orzinc is solid-dissolved in the bixbite type crystal phase.

The oxide sintered body of the present embodiment can further include atleast one type of element M selected from the group consisting ofaluminum (Al), titanium (Ti), chromium (Cr), gallium (Ga), hafnium (Hf),zirconium (Zr), silicon (Si), molybdenum (Mo), vanadium (V), niobium(Nb), tantalum (Ta), and bismuth (Bi). In this case, a content rate ofelement M to a total of indium (In), tungsten (W), zinc (Zn), and theelement (M) in the oxide sintered body (hereinafter also referred to as“M content rate” in the oxide sintered body) is preferably equal to orhigher than 0.1 atomic % and equal to or lower than 10 atomic %.According to this oxide sintered body, in the semiconductor device(e.g., a TFT) including, as a channel layer, the oxide semiconductorfilm formed by using the oxide sintered body, the ratio of the ONcurrent to the OFF current can be increased at low driving voltage. Inaddition, from this perspective, the M content rate in the oxidesintered body is more preferably equal to or higher than 0.1 atomic %and equal to or lower than 5 atomic %, and further preferably equal toor higher than 0.1 atomic % and equal to or lower than 1 atomic %.

When a content rate of at least one type of added element of Al, Ti, Cr,Ga, Hf, Si, V, and Nb is equal to or higher than 0.1 atomic %, the OFFcurrent of the semiconductor device including the oxide semiconductorobtained by using the oxide sintered body decreases advantageously.However, if the content rate of this added element is higher than 10atomic %, the ON current of the semiconductor device tends to decrease.

In addition, when a content rate of at least one type of added elementof Zr, Mo, Ta, and Bi is equal to or higher than 0.1 atomic %, the ONcurrent of the semiconductor device including the oxide semiconductorobtained by using the oxide sintered body increases advantageously.However, if the content rate of this added element is higher than 10atomic %, the OFF current of the semiconductor device tends to increase.

Since the oxide semiconductor film formed by using the oxide sinteredbody according to the present embodiment is used as a semiconductorlayer of the semiconductor device, it is desirable that an electricresistivity is higher than that desired as a transparentelectroconductive film. Specifically, it is preferable that an electricresistivity of the oxide semiconductor film formed by using the oxidesintered body according to the present embodiment is equal to or higherthan 1×10² Ωcm. For this purpose, it is preferable that a content rateof Si that may be included in the oxide sintered body is lower than0.007 in a ratio of Si/In atomic number. In addition, it is preferablethat a content rate of Ti that may be included in the oxide sinteredbody is lower than 0.004 in a ratio of Ti/In atomic number.

The electric resistivity of the oxide semiconductor film is measured bythe four-terminal method. Mo electrodes are formed as electrode membersby the sputtering method. Then, a voltage between the inner electrodesis measured while a voltage of −40 V to +40 V is swept to the outerelectrodes and a current is passed. The electric resistivity is thuscalculated.

It is preferable that the oxide sintered body of the present embodimentincludes tungsten having at least one of valences of six and four.According to this oxide sintered body, in the semiconductor device(e.g., a TFT) including, as a channel layer, the oxide semiconductorfilm formed by using the oxide sintered body, the ratio of the ONcurrent to the OFF current can be increased at low driving voltage.

It is also preferable that the oxide sintered body of the presentembodiment includes tungsten whose bonding energy measured by X-rayphotoelectron spectroscopy is equal to or higher than 245 eV and equalto or lower than 250 eV. According to this oxide sintered body, in thesemiconductor device (e.g., a TFT) including, as a channel layer, theoxide semiconductor film formed by using the oxide sintered body, theratio of the ON current to the OFF current can be increased at lowdriving voltage.

It is known that tungsten has various valences as an ion. When tungstenhas at least one of valences of four and six among these valences, theON current can be increased and the ratio of the ON current to the OFFcurrent can be increased at low driving voltage in the semiconductordevice (e.g., a TFT) including, as a channel layer, the oxidesemiconductor film formed by using the oxide sintered body. Tungsten mayhave only a valence of four or only a valence of six, or may have both avalence of four and a valence of six, or may further include any othervalence number that does not form a main component. It is preferablethat tungsten having at least one of valences of four and six is equalto or larger than 70 atomic % of a total amount of tungsten.

In the X-ray photoelectron spectroscopy (XPS), the valence can beobtained from the bonding energy of tungsten and a ratio of the valencenumber can be obtained by peak separation. The bonding energy oftungsten included in the oxide sintered body of the present embodimentis measured by the X-ray photoelectron spectroscopy. Then, when the peakposition is equal to or higher than 245 eV and equal to or lower than250 eV, the ON current can be increased and the ratio of the ON currentto the OFF current can be increased at low driving voltage in thesemiconductor device (e.g., a TFT) including the oxide semiconductorfilm as a channel layer. From this perspective, the aforementionedbonding energy is more preferably equal to or higher than 246 eV andequal to or lower than 249 eV, and further preferably equal to or higherthan 246 eV and equal to or lower than 248 eV.

It is known that a peak of the bonding energy of tungsten 4d5/2 of WO₃having a valence of six appears in a range of 247 eV to 249 eV, and apeak of the bonding energy of tungsten metal and tungsten 4d5/2 of WO₂having a valence of four appears in a range of 243 eV to 244 eV. Basedon this, it is preferable that the oxide sintered body of the presentembodiment mainly has a valence of six, from the perspective ofincreasing the ON current and increasing the ratio of the ON current tothe OFF current at low driving voltage in the semiconductor device(e.g., a TFT) including, as a channel layer, the oxide semiconductorfilm formed by using the oxide sintered body.

Second Embodiment: Method for Manufacturing Oxide Sintered Body

A method for manufacturing an oxide sintered body of the presentembodiment is a method for manufacturing the oxide sintered body of thefirst embodiment, the method including the steps of: preparing a primarymixture of a zinc oxide powder and a tungsten oxide powder; forming acalcined powder by heat-treating the primary mixture; preparing asecondary mixture of raw material powders, wherein the secondary mixtureincludes the calcined powder; forming a molded body by molding thesecondary mixture; and forming the oxide sintered body by sintering themolded body. The step of forming a calcined powder includes forming acomplex oxide powder including zinc and tungsten as the calcined powderby heat-treating the primary mixture at a temperature equal to or higherthan 550° C. and lower than 1200° C. under an oxygen-containingatmosphere.

According to the method for manufacturing the oxide sintered body of thepresent embodiment, the step of forming a calcined powder includesforming a complex oxide powder including zinc and tungsten as thecalcined powder by heat-treating the primary mixture of the zinc oxidepowder and the tungsten oxide powder at the temperature equal to orhigher than 550° C. and lower than 1200° C. under the oxygen-containingatmosphere, and thus, the apparent density of the oxide sintered body isincreased and the oxide sintered body that can be suitably used as thesputtering target is obtained.

In the method for manufacturing the oxide sintered body of the presentembodiment, the zinc oxide powder and the tungsten oxide powder in theraw material powders are mixed to prepare the primary mixture, and thecomplex oxide powder including zinc and tungsten is formed as thecalcined powder by heat-treating this primary mixture at the temperatureequal to or higher than 550° C. and lower than 1200° C. under theoxygen-containing atmosphere, and thus, the apparent density of theoxide sintered body can be increased. The complex oxide may be short ofoxygen or any metal may be substituted. If the heat treatmenttemperature is lower than 550° C., the complex oxide powder includingzinc and tungsten is not obtained. If the heat treatment temperature isequal to or higher than 1200° C., the complex oxide powder includingzinc and tungsten decomposes and scatters, or a particle size of thepowder becomes too large.

In addition, since the complex oxide powder including zinc and tungstenis formed as the calcined powder by heat-treating the primary mixture ofthe zinc oxide powder and the tungsten oxide powder at the temperatureequal to or higher than 550° C. and lower than 1200° C. under theoxygen-containing atmosphere, tungsten in the oxide sintered body canhave at least one of valences of four and six. As a result, in thesemiconductor device including, as a channel layer, the oxidesemiconductor film formed by using the sputtering target including theobtained oxide sintered body, the ratio of the ON current to the OFFcurrent can be increased at low driving voltage.

Here, from the perspectives of increasing the apparent density of theoxide sintered body and of increasing a ratio of tungsten having atleast one of valences of six and four in the oxide sintered body, it ispreferable that the complex oxide including zinc and tungsten includes aZnWO₄ type crystal phase. The ZnWO₄ type crystal phase has a crystalstructure expressed by a space group of P12/c1 (13) and is a zinctungstate compound crystal phase having a crystal structure defined in01-088-0251 of the JCPDS card. As long as the complex oxide exhibitsthese crystal systems, a lattice constant may vary due to shortage ofoxygen or solid-dissolution of metal.

In addition, from the perspectives of increasing the apparent density ofthe oxide sintered body and of increasing the ratio of tungsten havingat least one of valences of six and four in the oxide sintered body, itis preferable that the tungsten oxide powder includes at least one typeof crystal phase selected from the group consisting of a WO₃ crystalphase, a WO₂ crystal phase and a WO_(2.72) crystal phase. From theseperspectives, it is more preferable that the tungsten oxide powder is atleast one powder selected from the group consisting of a WO₃ powder, aWO₂ powder and a WO_(2.72) powder.

In addition, from the perspective of increasing the apparent density ofthe oxide sintered body, median particle size d50 of the tungsten oxidepowder is preferably equal to or larger than 0.1 μm and equal to orsmaller than 4 μm, more preferably equal to or larger than 0.2 μm andequal to or smaller than 2 μm, and further preferably equal to or largerthan 0.3 μm and equal to or smaller than 1.5 μm. Median particle sized50 herein is a value obtained by BET specific surface area measurement.If median particle size d50 is smaller than 0.1 μm, handling of thepowder is difficult and it is difficult to uniformly mix the zinc oxidepowder and the tungsten oxide powder. If median particle size d50 islarger than 4 μm, the particle size of the complex oxide powderincluding zinc and tungsten, which is obtained by mixing with the zincoxide powder and thereafter heat-treating the mixture at the temperatureequal to or higher than 550° C. and lower than 1200° C. under theoxygen-containing atmosphere, becomes large and it is difficult toincrease the apparent density of the oxide sintered body.

In addition, from the perspective of increasing the apparent density ofthe oxide sintered body, it is preferable that the aforementionedcomplex oxide includes the ZnWO₄ type crystal phase.

The method for manufacturing the oxide sintered body of the presentembodiment is not particularly limited. However, from the perspective ofefficiently forming the oxide sintered body of the first embodiment, themethod for manufacturing the oxide sintered body of the presentembodiment includes the following steps, for example.

1. Step of Preparing Raw Material Powders

As the raw material powders for the oxide sintered body, oxide powdersof the metal elements or Si that constitute the oxide sintered body,such as an indium oxide powder (e.g., an In₂O₃ powder), a tungsten oxidepowder (e.g., a WO₃ powder, a WO_(2.72) powder, a WO₂ powder) and a zincoxide powder (e.g., a ZnO powder), are prepared. As to the tungstenoxide powder, from the perspective of allowing tungsten in the oxidesintered body to have at least one of valences of six and four, it ispreferable that not only the WO₃ powder but also the powder such as theWO_(2.72) powder and the WO₂ powder having a chemical composition thatis short of oxygen as compared with the WO₃ powder is used as a rawmaterial. From this perspective, it is more preferable to use at leastone of the WO_(2.72) powder and the WO₂ powder as at least a part of thetungsten oxide powder. From the perspective of preventing unintendedentry of the metal elements and Si into the oxide sintered body andobtaining the stable properties, it is preferable that a purity of theraw material powders is high, i.e., equal to or higher than 99.9 mass %.

In addition, from the perspective of increasing the apparent density ofthe oxide sintered body, it is preferable that median particle size d50of the tungsten oxide powder is equal to or larger than 0.1 μm and equalto or smaller than 4 μm.

2. Step of Preparing Primary Mixture of Raw Material Powders

Among the aforementioned raw material powders, the tungsten oxide powder(the WO₃ powder, the WO_(2.72) powder and/or the WO₂ powder) and thezinc oxide powder (the ZnO powder) are pulverized and mixed. At thistime, when it is desired to obtain the ZnWO₄ type phase as the crystalphase of the oxide sintered body, the tungsten oxide powder and the zincoxide powder as the raw material powders are mixed at a molar ratio of1:1. When it is desired to obtain a Zn₂W₃O₈ type phase as the crystalphase of the oxide sintered body, the tungsten oxide powder and the zincoxide powder as the raw material powders are mixed at a molar ratio of3:2. From the perspective of increasing the apparent density of theoxide sintered body, it is preferable to use the ZnWO₄ type phase. Amethod for pulverizing and mixing the raw material powders is notparticularly limited, and either a dry-type method or a wet-type methodmay be used. Specifically, the raw material powders are pulverized andmixed by using a ball mill, a planetary ball mill, a bead mill or thelike. In this way, the primary mixture of the raw material powders isobtained. A drying method such as natural drying or a spray dryer may bepreferably used to dry the mixture obtained by using the wet-typepulverizing and mixing method.

3. Step of Forming Calcined Powder by Heat-Treating Primary Mixture

Next, the obtained primary mixture is heat-treated (calcined). Atemperature for calcining the primary mixture is preferably lower than1200° C. to prevent a particle size of the calcined product frombecoming too large and the apparent density of the sintered body fromdecreasing. In order to obtain the ZnWO₄ type crystal phase or theZn₂W₃O₈ type crystal phase as the calcined product, the temperature ispreferably equal to or higher than 550° C. The temperature is morepreferably equal to or higher than 550° C. and lower than 1000° C., andfurther preferably equal to or higher than 550° C. and equal to or lowerthan 800° C. In this way, the calcined powder including the ZnWO₄ typecrystal phase or the Zn₂W₃O₈ type crystal phase is obtained. Anyatmosphere may be used as a calcination atmosphere, as long as thecalcination atmosphere is an oxygen-containing atmosphere. However, anatmospheric pressure or an air atmosphere pressurized as compared withthe atmospheric air or an oxygen-nitrogen ing atmosphere includingoxygen at 25 volume % or more is preferable. The atmospheric pressureand the air atmosphere are more preferable because of high productivity.

4. Step of Preparing Secondary Mixture of Raw Material Powders IncludingCalcined Powder

Next, the obtained calcined powder and the In₂O₃ powder among theaforementioned raw material powders are pulverized and mixed by thepulverizing and mixing method similar to the one described above. Inthis way, the secondary mixture of the raw material powders is obtained.

5. Step of Forming Molded Body by Molding Secondary Mixture

Next, the obtained secondary mixture is molded. A method for molding thesecondary mixture is not particularly limited. However, from theperspective of increasing the apparent density of the sintered body, auniaxial press method, a CIP (cold isostatic press) method, a castingmethod or the like is preferable. In this way, the molded body isobtained.

6. Step of Forming Oxide Sintered Body by Sintering Molded Body

Next, the obtained molded body is sintered. It is preferable not to usea hot press sintering method. A temperature for sintering the moldedbody is not particularly limited. However, from the perspective ofmaking the apparent density of the formed oxide sintered body higherthan 6.5 g/cm³, the temperature is preferably equal to or higher than900° C. and equal to or lower than 1200° C. In addition, a sinteringatmosphere is not particularly limited. However, from the perspective ofpreventing the particle size of the crystals that constitute the oxidesintered body from becoming large and preventing occurrence of cracks,the atmospheric pressure and the air atmosphere are preferable. In thisway, the oxide sintered body of the present embodiment is obtained.

Third Embodiment: Sputtering Target

The sputtering target of the present embodiment includes the oxidesintered body of the first embodiment. Since the sputtering target ofthe present embodiment includes the oxide sintered body of the firstembodiment, the sputtering target of the present embodiment can besuitably used to form the oxide semiconductor film of the semiconductordevice having high characteristics by the sputtering method.

The sputtering target of the present embodiment preferably includes theoxide sintered body of the first embodiment, and is more preferablyformed of the oxide sintered body of the first embodiment, in order toallow the sputtering target of the present embodiment to be suitablyused to form the oxide semiconductor film of the semiconductor devicehaving high characteristics by the sputtering method.

Fourth Embodiment: Semiconductor Device

Referring to FIG. 1, a semiconductor device 10 of the present embodimentincludes an oxide semiconductor film 14 formed by the sputtering methodby using the oxide sintered body of the first embodiment as thesputtering target. Since the semiconductor device of the presentembodiment includes the oxide semiconductor film formed by thesputtering method by using the oxide sintered body of the firstembodiment as the sputtering target, the semiconductor device of thepresent embodiment has high characteristics.

Although semiconductor device 10 of the present embodiment is notparticularly limited, semiconductor device 10 of the present embodimentis, for example, a TFT (thin-film transistor) which is semiconductordevice 10 including, as a channel layer, oxide semiconductor film 14formed by the sputtering method by using the oxide sintered body of thefirst embodiment as the sputtering target. Since the TFT which is oneexample of semiconductor device 10 of the present embodiment includes,as a channel layer, oxide semiconductor film 14 formed by the sputteringmethod by using the oxide sintered body of the aforementioned embodimentas the target, the OFF current is decreased and the ratio of the ONcurrent to the OFF current is increased at low driving voltage.

More specifically, as shown in FIG. 1, the TFT which is semiconductordevice 10 of the present embodiment includes a substrate 11, a gateelectrode 12 arranged on substrate 11, a gate insulating film 13arranged on gate electrode 12 as an insulating layer, oxidesemiconductor film 14 arranged on gate insulating film 13 as a channellayer, and a source electrode 15 and a drain electrode 16 arranged onoxide semiconductor film 14 so as not to be in contact with each other.

From the perspective of increasing the ratio of the ON current to theOFF current at low driving voltage in the TFT which is semiconductordevice 10 of the present embodiment, it is preferable that a contentrate of tungsten to a total of indium, tungsten and zinc in oxidesemiconductor film 14 (hereinafter also referred to as “W content rate”in oxide semiconductor film 14) is higher than 1.2 atomic % and lowerthan 30 atomic %, and a content rate of zinc to the total of indium,tungsten and zinc in oxide semiconductor film 14 (hereinafter alsoreferred to as “Zn content rate” in oxide semiconductor film 14) ishigher than 1.2 atomic % and lower than 30 atomic %. Here, the chemicalcomposition, i.e., the content rate of each element, of oxidesemiconductor film 14 is measured by RBS (Rutherford backscatteringanalysis).

In addition, from the aforementioned perspective, the W content rate inoxide semiconductor film 14 is more preferably higher than 2.0 atomic %and lower than 15 atomic %, and further preferably higher than 4.0atomic % and lower than 12 atomic %. In addition, from theaforementioned perspective, the Zn content rate in oxide semiconductorfilm 14 is more preferably higher than 2.0 atomic % and lower than 15atomic %, and further preferably higher than 4.0 atomic % and lower than12 atomic %.

If the W content rate in oxide semiconductor film 14 is equal to orlower than 1.2 atomic %, the OFF current tends to increase and the ratioof the ON current to the OFF current tends to decrease in the TFT whichis semiconductor device 10 including oxide semiconductor film 14 as thechannel layer. If the W content rate in oxide semiconductor film 14 isequal to or higher than 30 atomic %, the ON current tends to decrease orthe ratio of the ON current to the OFF current tends to decrease at lowdriving voltage in the TFT which is semiconductor device 10 includingoxide semiconductor film 14 as the channel layer.

If the Zn content rate in oxide semiconductor film 14 is equal to orlower than 1.2 atomic %, the OFF current tends to increase and the ratioof the ON current to the OFF current tends to decrease in the TFT whichis semiconductor device 10 including oxide semiconductor film 14 as thechannel layer. If the Zn content rate in oxide semiconductor film 14 isequal to or higher than 30 atomic %, the ON current tends to decrease orthe ratio of the ON current to the OFF current tends to decrease at lowdriving voltage in the TFT which is semiconductor device 10 includingoxide semiconductor film 14 as the channel layer.

From the perspective of increasing the ratio of the ON current to theOFF current at low driving voltage in the TFT which is semiconductordevice 10 of the present embodiment, an atomic ratio of tungsten to zincincluded in oxide semiconductor film 14 (hereinafter also referred to as“W/Zn atomic ratio”) is preferably higher than 0.5 and lower than 3.0,more preferably higher than 0.8 and lower than 2.5, and furtherpreferably higher than 1.0 and lower than 2.2. Here, the chemicalcomposition, i.e., the W/Zn atomic ratio, of oxide semiconductor film 14is measured by the RBS (Rutherford backscattering analysis).

If the W/Zn atomic ratio is equal to or higher than 3.0, the OFF currentincreases and the ratio of the ON current to the OFF current decreasesin the TFT which is semiconductor device 10 including this oxidesemiconductor film as the channel layer. If the W/Zn atomic ratio isequal to or lower than 0.5, the ON current decreases or the ratio of theON current to the OFF current decreases at low driving voltage in theTFT which is semiconductor device 10 including oxide semiconductor film14 as the channel layer.

From the perspective of increasing the ON current and increasing theratio of the ON current to the OFF current at low driving voltage in theTFT which is semiconductor device 10 of the present embodiment, it ispreferable that oxide semiconductor film 14 includes tungsten having atleast one of valences of six and four.

From the perspective of increasing the ratio of the ON current to theOFF current at low driving voltage in the TFT which is semiconductordevice 10 of the present embodiment, it is preferable that oxidesemiconductor film 14 includes tungsten whose bonding energy measured bythe X-ray photoelectron spectroscopy is equal to or higher than 245 eVand equal to or lower than 250 eV.

(Method for Manufacturing Semiconductor Device)

Referring to FIG. 2, a method for manufacturing semiconductor device 10of the present embodiment is not particularly limited. However, from theperspective of efficiently manufacturing semiconductor device 10 havinghigh characteristics, it is preferable that the method for manufacturingsemiconductor device 10 of the present embodiment includes the steps offorming gate electrode 12 on substrate 11 (FIG. 2(A)), forming gateinsulating film 13 on gate electrode 12 as the insulating layer (FIG.2(B)), forming oxide semiconductor film 14 on gate insulating film 13 asthe channel layer (FIG. 2(C)), and forming source electrode 15 and drainelectrode 16 on oxide semiconductor film 14 so as not to be in contactwith each other (FIG. 2(D)).

1. Step of Forming Gate Electrode

Referring to FIG. 2(A), gate electrode 12 is formed on substrate 11.Although substrate 11 is not particularly limited, a quartz glasssubstrate, an alkali-free glass substrate, an alkali glass substrate orthe like is preferable from the perspective of increasing thetransparency, the price stability and the surface smoothness. Althoughgate electrode 12 is not particularly limited, an Mo electrode, a Tielectrode, a W electrode, an Al electrode, a Cu electrode or the like ispreferable from the perspective of high oxidation resistance and lowelectric resistance. Although a method for forming gate electrode 12 isnot particularly limited, the vacuum vapor deposition method, thesputtering method or the like is preferable from the perspective ofallowing large-area and uniform formation on a main surface of thesubstrate.

2. Step of Forming Gate Insulating Film

Referring to FIG. 2(B), gate insulating film 13 is formed on gateelectrode 12 as the insulating layer. Although gate insulating film 13is not particularly limited, an SiO_(x) film, an SiN_(y) film or thelike is preferable from the perspective of high insulation property.Although a method for forming gate insulating film 13 is notparticularly limited, a plasma CVD (chemical vapor deposition) method orthe like is preferable from the perspectives of allowing large-area anduniform formation on the main surface of substrate 11 having the gateelectrode formed thereon and of ensuring the insulation property.

3. Step of Forming Oxide Semiconductor Film

Referring to FIG. 2(C), oxide semiconductor film 14 is formed on gateinsulating film 13 as the channel layer. From the perspective ofmanufacturing semiconductor device 10 having high characteristics, oxidesemiconductor film 14 is formed by the sputtering method by using theoxide sintered body of the first embodiment as the sputtering target.The sputtering method herein refers to a method for forming the filmconstituted by the atoms forming the target, by arranging the target andthe substrate in a film formation chamber to face each other, applying avoltage to the target, and sputtering a surface of the target with anoble gas ion, thereby releasing the atoms forming the target from thetarget and depositing the atoms on the substrate (also including thesubstrate having the gate electrode and the gate insulating film formedthereon as described above).

4. Step of Forming Source Electrode and Drain Electrode

Referring to FIG. 2(D), source electrode 15 and drain electrode 16 areformed on oxide semiconductor film 14 so as not to be in contact witheach other. Although source electrode 15 and drain electrode 16 are notparticularly limited, an Mo electrode, a Ti electrode, a W electrode, anAl electrode, a Cu electrode or the like is preferable from theperspective of high oxidation resistance, low electric resistance andlow contact electric resistance with oxide semiconductor film 14.Although a method for forming source electrode 15 and drain electrode 16is not particularly limited, the vacuum vapor deposition method, thesputtering method or the like is preferable from the perspective ofallowing large-area and uniform formation on the main surface ofsubstrate 11 having oxide semiconductor film 14 formed thereon. Althougha method for forming source electrode 15 and drain electrode 16 so asnot to be in contact with each other is not particularly limited,formation by an etching method using a photoresist is preferable fromthe perspective of allowing large-area and uniform formation of thepatterns of source electrode 15 and drain electrode 16 on the mainsurface of substrate 11 having oxide semiconductor film 14 formedthereon.

The valence of tungsten included in the oxide sintered body of the firstembodiment, the sputtering target of the third embodiment, and the oxidesemiconductor film in the semiconductor device of the fourth embodimentis measured by the X-ray photoelectron spectroscopy (XPS). The peak ofthe bonding energy of tungsten 4d5/2 of WO₃ having a valence of sixappears in a range of 247 eV to 249 eV, and the peak of the bondingenergy of tungsten metal and tungsten 4d5/2 of WO₂ having a valence offour appears in a range of 243 eV to 244 eV. Therefore, a ratio oftungsten having at least one of valences of six and four can be obtainedfrom intensity areas of the peaks present within these ranges and thepeaks present outside these ranges. When a ratio of a total peakintensity area of the valences of six and four to an entire peakintensity area of tungsten is equal to or higher than 70%, it can bedetermined that tungsten having at least one of valences of six and fouris a main component.

From the perspective of increasing the ON current and increasing theratio of the ON current to the OFF current at low driving voltage in theTFT (thin-film transistor) which is semiconductor device 10 includingoxide semiconductor film 14 as the channel layer, it is preferable thattungsten included in the oxide sintered body of the first embodiment,the sputtering target of the third embodiment, and oxide semiconductorfilm 14 in semiconductor device 10 of the fourth embodiment mainly has avalence of six.

Tungsten having a valence of six can be confirmed based on the fact thatthe bonding energy of tungsten examined by the X-ray photoelectronspectroscopy is equal to or higher than 245 eV and equal to or lowerthan 250 eV.

EXAMPLE Examples 1 to 8

1. Preparation of Powder Raw Materials

A tungsten oxide powder (denoted as “W” in Table 1) having a type andmedian particle size d50 shown in Table 1 and having a purity of 99.99mass %, a ZnO powder (denoted as “Z” in Table 1) having median particlesize d50 of 1.0 μm and having a purity of 99.99 mass %, and an In₂O₃powder (denoted as “I” in Table 1) having median particle size d50 of1.0 μm and having a purity of 99.99 mass % were prepared.

2. Preparation of Primary Mixture of Raw Material Powders

First, among the prepared raw material powders, the tungsten oxidepowder and the ZnO powder were put into a ball mill, and were pulverizedand mixed for 18 hours to prepare a primary mixture of the raw materialpowders. A molar mixing ratio between the tungsten oxide powder and theZnO powder was set at tungsten oxide powder:ZnO powder=1:1. Ethanol wasused as a dispersion medium at the time of pulverization and mixingdescribed above. The obtained primary mixture of the raw materialpowders was dried in the atmosphere.

3. Formation of Calcined Powder by Heat-Treating Primary Mixture

Next, the obtained primary mixture of the raw material powders was putinto a crucible made of alumina, and was calcined for 8 hours at atemperature of 650° C. in an air atmosphere. From the perspective ofmaking a particle size of a calcined powder as small as possible, alower calcination temperature is preferable as long as the calcinationtemperature is a temperature that allows formation of a crystal phase.In this way, the calcined powder including the ZnWO₄ type phase as acrystal phase was obtained.

4. Preparation of Secondary Mixture of Raw Material Powders IncludingCalcined Powder

Next, the obtained calcined powder was put into a pot together with theIn₂O₃ powder which was the prepared raw material powder, and further wasput into a pulverizing and mixing ball mill, and was pulverized andmixed for 12 hours to prepare a secondary mixture of the raw materialpowders. A mixing amount of the In₂O₃ powder was set such that a molarmixing ratio among the tungsten oxide powder, the ZnO powder and theIn₂O₃ powder was as shown in Table 1. Ethanol was used as a dispersionmedium at the time of pulverization and mixing described above. Theobtained mixed powder was dried by spray drying.

5. Formation of Molded Body by Molding Secondary Mixture

Next, the obtained secondary mixture was molded by pressing, and furtherwas pressure-molded at a pressure of 190 MPa in the static water havinga room temperature (5° C. to 30° C.) by CIP. A disk-shaped molded bodyhaving a diameter of 100 mm and a thickness of about 9 mm was thusobtained.

6. Formation of Oxide Sintered Body by Sintering Molded Body

Next, the obtained molded body was fired for 8 hours under theatmospheric pressure and the air atmosphere at the firing temperaturesshown in Examples 1 to 8 in Table 1. An oxide sintered body including abixbite type crystal phase (In₂O₃ type phase) having tungsten and zincsolid-dissolved therein was thus obtained.

7. Evaluation of Properties of Oxide Sintered Body

The crystal phases of the obtained oxide sintered body were identifiedby obtaining a sample from a part of the oxide sintered body andconducting crystal analysis by a powder X-ray diffraction method. Cu-Kαray was used as X-ray. The crystal phases present in the oxide sinteredbody were shown in Table 1.

It was confirmed as follows that the In₂O₃ type phase which is thebixbite type crystal phase was a main component in the obtained oxidesintered body. First, the presence of the bixbite type crystal phase andthe presence of the crystal phases other than the bixbite type crystalphase were identified by the X-ray diffraction. In some cases, only thebixbite type crystal phase was identified by the X-ray diffraction. Whenonly the bixbite type crystal phase was identified, it was determinedthat the bixbite type crystal phase was a main component.

When the presence of the bixbite type crystal phase and the presence ofthe crystal phases other than the bixbite type crystal phase wereidentified by the X-ray diffraction, it was confirmed as follows thatthe In₂O₃ type phase which is the bixbite type crystal phase was a maincomponent.

A sample was obtained from a part of the oxide sintered body and asurface of the sample was polished to make the surface smooth. Then, byusing the SEM-FDX, the surface of the sample was observed by the SEM anda composition ratio of the metal elements of the respective crystalparticles was analyzed by the FDX. The crystal particles were grouped inaccordance with a tendency of the composition ratio of the metalelements of these crystal particles. Then, the crystal particles couldbe divided into a group of the crystal particles having a high Zncontent rate and a high W content rate, and a group of the crystalparticles having a very low Zn content rate and a very low W contentrate and having a high In content rate. The group of the crystalparticles having a high Zn content rate and a high W content rate wasconcluded as the crystal phases other than the bixbite type crystalphase, and the group of the crystal particles having a very low Zncontent rate and a very low W content rate and having a high in contentrate was concluded as the In₂O₃ type crystal phase which is the bixbitetype crystal phase.

When the ratio of the area of the In₂O₃ type crystal phase which is thebixbite type crystal phase to the aforementioned measured surface of theoxide sintered body (the occupancy rate of the bixbite type crystalphase) was equal to or higher than 90%, it was determined that the In₂O₃type crystal phase which is the bixbite type crystal phase was a maincomponent. The oxide sintered bodies in Examples 1 to 8 were all mainlycomposed of the In₂O₃ type crystal phase which is the bixbite typecrystal phase.

Contained amounts of indium, zinc and tungsten in the obtained oxidesintered body were measured by the ICP mass spectrometry. Based on thesecontained amounts, the W content rate (denoted as “W content rate” inTable 2) and the Zn content rate (denoted as “Zn content rate” in Table2) were calculated in atomic %. The result was shown in Table 2.

An apparent density of the obtained oxide sintered body was obtained bythe Archimedes method.

The X-ray photoelectron spectroscopy (XPS) was used as a method formeasuring the valence of tungsten included in the obtained oxidesintered body and a sputtering target. The peak of the bonding energy oftungsten 4d5/2 of WO₃ having a valence of six appeared in a range of 247eV to 249 eV, and the peak of the bonding energy of tungsten metal andtungsten 4d5/2 of WO₂ having a valence of four appeared in a range of243 eV to 244 eV. The valence of tungsten identified by the XPS (denotedas “W valence” in Table 2) and the peak position of the bonding energy(denoted as “W bonding energy” in Table 2) were shown in Table 2.

8. Fabrication of Target

The obtained oxide sintered body was processed into a target having adiameter of 3 inches (76.2 mm) and a thickness of 5.0 mm.

9. Fabrication of Semiconductor Device

(1) Formation of Gate Electrode

Referring to FIG. 2(A), a synthetic quartz glass substrate of 50 mm×50mm×0.6 mm in thickness was first prepared as substrate 11, and an Moelectrode having a thickness of 100 nm was formed on substrate 11 asgate electrode 12 by the sputtering method.

(2) Formation of Gate Insulating Film

Referring to FIG. 2(B), an amorphous SiO_(x) film having a thickness of200 nm was next formed on gate electrode 12 as gate insulating film 13by the plasma CVD method.

(3) Formation of Oxide Semiconductor Film

Referring to FIG. 2(C), oxide semiconductor film 14 having a thicknessof 35 nm was next formed on gate insulating film 13 by a DC (directcurrent) magnetron sputtering method by using the target processed fromthe oxide sintered body in each of Examples 1 to 8. Here, a plane of thetarget having a diameter of 3 inches (76.2 mm) was a sputtering surface.

Specifically, substrate 11 having aforementioned gate electrode 12 andgate insulating film 13 formed thereon was arranged on a water-cooledsubstrate holder in a film formation chamber of a sputtering apparatus(not shown) such that gate insulating film 13 was exposed. Theaforementioned target was arranged at a distance of 90 mm to face gateinsulating film 13. The degree of vacuum in the film formation chamberwas set at approximately 6×10⁻⁵ Pa and the target was sputtered asfollows.

First, with a shutter interposed between gate insulating film 13 and thetarget, a mixed gas of an Ar (argon) gas and an O₂ (oxygen) gas wasintroduced into the film formation chamber until the pressure of 0.5 Pawas reached. A content rate of the O₂ gas in the mixed gas was 20 volume%. The DC electric power of 100 W was applied to the target to causesputtering discharge, and thereby, cleaning (pre-sputtering) of thetarget surface was performed for 10 minutes.

Next, the DC electric power of 100 W was applied to the same target, andwith the atmosphere in the film formation chamber maintained, theaforementioned shutter was removed and oxide semiconductor film 14 wasformed on gate insulating film 13. A bias voltage was not particularlyapplied to the substrate holder and the substrate holder was onlywater-cooled. At this time, the film formation time was set such thatoxide semiconductor film 14 had a thickness of 35 nm. In this way, oxidesemiconductor film 14 was formed by the DC (direct current) magnetronsputtering method by using the target processed from the oxide sinteredbody. This oxide semiconductor film 14 functions as a channel layer in aTFT (thin-film transistor) which is semiconductor device 10.

Next, a part of oxide semiconductor film 14 thus formed was etched toform a source electrode forming portion 14 s, a drain electrode formingportion 14 d and a channel portion 14 c. A size of a main surface ofeach of source electrode forming portion 14 s and drain electrodeforming portion 14 d was set to be 100 μm×100 μm, and a channel lengthC_(L) (referring to FIGS. 1(A) and 1(B) and FIG. 2, channel length C_(L)refers to a distance of channel portion 14 c between source electrode 15and drain electrode 16) was set to be 20 μm, and a channel width C_(W)(referring to FIGS. 1(A) and 1(B) and FIG. 2, channel width C_(W) refersto a width of channel portion 14 c) was set to be 40 μm. 25 channelportions 14 c in height and 25 channel portions 14 c in width werearranged at intervals of 3 μm within the substrate main surface of 75mm×75 mm such that 25 thin-film transistors (TFTs) which are thesemiconductor devices in height and 25 thin-film transistors in widthwere arranged at intervals of 3 mm within the substrate main surface of75 mm×75 mm.

The aforementioned etching of a part of oxide semiconductor film 14 wasperformed, specifically, by preparing an etching aqueous solutionincluding phosphoric acid, acetic acid and nitric acid at a volume ratioof phosphoric acid acetic acid nitric acid=87:10:3, and immersing, inthis etching aqueous solution, substrate 11 having gate electrode 12,gate insulating film 13 and oxide semiconductor film 14 formed thereonin this order. At this time, a temperature of the etching aqueoussolution was raised to 45° C. in a hot bath.

(4) Formation of Source Electrode and Drain Electrode

Referring to FIG. 2(D), source electrode 15 and drain electrode 16 werenext formed on oxide semiconductor film 14 to be separated from eachother.

Specifically, a resist (not shown) was applied onto oxide semiconductorfilm 14 and was exposed and developed such that only the main surfacesof source electrode forming portion 14 s and drain electrode formingportion 14 d of oxide semiconductor film 14 were exposed. An Moelectrode having a thickness of 100 nm as source electrode 15 and an Moelectrode having a thickness of 100 nm as drain electrode 16 were formedon the main surfaces of source electrode forming portion 14 s and drainelectrode forming portion 14 d of oxide semiconductor film 14,respectively, by the sputtering method so as to be separated from eachother. Thereafter, the resist on oxide semiconductor film 14 was peeledoff. As for these Mo electrodes as source electrode 15 and drainelectrode 16, one source electrode 15 and one drain electrode 16 werearranged for one channel portion 14 c such that 25 thin-film transistors(TFTs) which are semiconductor devices 10 in height and 25 thin-filmtransistors in width were arranged at intervals of 3 mm within thesubstrate main surface of 75 mm×75 mm.

Next, the obtained TFT which is semiconductor device 10 was heat-treatedat 150° C. for one hour in the nitrogen atmosphere.

10. Evaluation of Characteristics of Semiconductor Device

The characteristics of the TFT which is semiconductor device 10 wereevaluated as follows. First, a measurement needle was brought intocontact with gate electrode 12, source electrode 15 and drain electrode16. A source-drain voltage V_(ds) of 7 V was applied to between sourceelectrode 15 and drain electrode 16, and a source-gate voltage V_(gs)applied to between source electrode 15 and gate electrode 12 was changedfrom −10 V to 15 V and a source-drain current I_(ds) at this time wasmeasured. Source-drain current I_(ds) when source-gate voltage V_(gs)was −5 V was defined as the OFF current. A value of the OFF current ineach Example was shown in Table 2. In the section of “OFF current” inTable 2, “E-12” represents “10⁻¹²”, for example. Source-drain currentI_(ds) when source-gate voltage V_(gs) was 15 V was defined as the ONcurrent and a ratio of a value of the ON current to a value of the OFFcurrent (ON current/OFF current ratio) was obtained. This was shown inTable 2. In the section of “ON current/OFF current ratio” in Table 2,the nine digits represent equal to or higher than 1×10⁹ and lower than1×10¹⁰, the eight digits represent equal to or higher than 1×10⁸ andlower than 1×10⁹, the seven digits represent equal to or higher than1×10⁷ and lower than 1×10⁸, the six digits represent equal to or higherthan 1×10⁶ and lower than 1×10⁷, and the four digits represent equal toor higher than 1×10⁴ and lower than 1×10⁵.

Contained amounts of indium, zinc and tungsten in oxide semiconductorfilm 14 of the TFT were measured by the RBS (Rutherford backscatteringanalysis). Based on these contained amounts, the W content rate and theZn content rate were calculated in atomic %. Based on these containedamounts, the W/Zn atomic ratio was also calculated. The result was shownin Table 2.

The valence of tungsten included in obtained oxide semiconductor film 14was measured by the X-ray photoelectron spectroscopy (XPS). The peak ofthe bonding energy of tungsten 4d5/2 of WO₃ having a valence of sixappeared in a range of 247 eV to 249 eV, and the peak of the bondingenergy of tungsten metal and tungsten 4d5/2 of WO₂ having a valence offour appeared in a range of 243 eV to 244 eV. The valence of tungstenidentified by the XPS (denoted as “W valence” in Table 2) and the peakposition of the bonding energy (denoted as “W bonding energy” in Table2) were shown in Table 2.

TABLE 1 Raw Material Powders Calci- Oxide Sintered Body W nationCalcined Sintering Presence or Molar Mixing Ratio Particle Temper-Complex Temper- Apparent Crystal Absence of W Z I M W M Size ature Oxideature Density Phase Solid (%) (%) (%) (%) Type Type μm ° C. Type ° C.(g/cm³) Present Solution Example 1 3.1 3.1 93.8 0.0 WO_(2.72) none 0.8650 ZnWO₄ 1190 6.82 In₂O₃ present Example 2 6.2 6.2 87.6 0.0 WO₂ none0.8 650 ZnWO₄ 1175 6.84 In₂O₃ present Example 3 11.2 11.2 77.6 0.0 WO₃none 0.8 650 ZnWO₄ 1175 6.86 In₂O₃ present Example 4 14.3 14.3 71.4 0.0WO₃ none 0.8 650 ZnWO₄ 1150 6.87 In₂O₃, ZnWO₄ present Example 5 17.317.3 65.4 0.0 WO₃ none 0.8 650 ZnWO₄ 1150 6.89 In₂O₃, ZnWO₄ presentExample 6 24.6 24.6 50.8 0.0 WO₃ none 0.8 650 ZnWO₄ 1150 6.92 In₂O₃,ZnWO₄ present Example 7 20.8 20.8 58.4 0.0 WO₃ none 0.8 650 ZnWO₄ 11006.90 In₂O₃, ZnWO₄ present Exmnple 8 30.4 30.4 39.2 0.0 WO₃ none 0.8 650ZnWO₄ 1100 6.94 In₂O₃, ZnWO₄ present Example 9 4.5 3.0 92.5 0.0 WO₃ none0.8 950 Zn₂W₃O₈ 1190 6.62 In₂O₃ present Example 10 6.2 4.1 89.7 0.0 WO₃none 0.8 950 Zn₂W₃O₈ 1190 6.64 In₂O₃ present Example 11 9.1 6.1 84.8 0.0WO₃ none 0.8 950 Zn₂W₃O₈ 1175 6.74 In₂O₃ present Example 12 14.5 9.775.8 0.0 WO₃ none 0.8 950 Zn₂W₃O₈ 1150 6.78 In₂O₃, Zn₂W₃O₈ presentExample 13 4.8 4.8 86.6 3.8 WO_(2.72) Al 0.8 650 ZnWO₄ 1175 6.83 In₂O₃present Example 14 4.8 4.8 88.9 1.5 WO_(2.72) Cr 0.8 650 ZnWO₄ 1175 6.82In₂O₃ present Example 15 4.8 4.8 89.9 0.5 WO_(2.72) Ga 0.8 650 ZnWO₄1175 6.81 In₂O₃ present Example 16 4.8 4.8 88.0 2.4 WO_(2.72) Ga 0.8 650ZnWO₄ 1175 6.82 In₂O₃ present Example 17 4.8 4.8 86.1 4.3 WO_(2.72) Ga0.8 650 ZnWO₄ 1175 6.85 In₂O₃ present Example 18 4.8 4.8 89.9 0.5WO_(2.72) Hf 0.8 650 ZnWO₄ 1175 6.79 In₂O₃ present Example 19 4.8 4.889.4 1.0 WO_(2.72) V 0.8 650 ZnWO₄ 1175 6.81 In₂O₃ present Example 204.8 4.8 88.9 1.5 WO_(2.72) Nb 0.8 650 ZnWO₄ 1175 6.78 In₂O₃ presentExample 21 4.8 4.8 88.4 2.0 WO_(2.72) Zr 0.8 650 ZnWO₄ 1175 6.82 In₂O₃present Example 22 4.8 4.8 86.6 3.8 WO_(2.72) Mo 0.8 650 ZnWO₄ 1175 6.80In₂O₃ present Example 23 4.8 4.8 87.5 2.9 WO_(2.72) Ta 0.8 650 ZnWO₄1175 6.78 In₂O₃ present Example 24 4.8 4.8 89.4 1.0 WO_(2.72) Bi 0.8 650ZnWO₄ 1175 6.81 In₂O₃ present Comparative 7.1 7.1 85.8 0.0 WO₃ none 4.5none none 1175 5.41 In₂O₃ present Example 1 Comparative 6.9 6.9 86.2 0.0WO₃ none 0.09 none none 1175 4.30 In₂O₃ present Example 2 Comparative7.0 7.0 86.0 0.0 WO₃ none 0.8 none none 1175 6.43 In₂O₃ present Example3

TABLE 2 Oxide Sintered Body Oxide Semiconductor Film TFT CharacteristicsW Zn M W W Zn W ON Current/ Content Content Content Bonding ContentContent W/Zn Bonding OFF OFF Current Rate Rate Rate W Energy Rate RateAtomic W Energy Current Ratio (at. %) (at. %) (at. %) Valence (eV) (at.%) (at. %) Ratio Valence (eV) (A) (digit) Example 1 1.4 1.4 0 6 247.31.4 1.3 1.8 6 247.5 E-12 8 Example 2 3.2 3.0 0 6 247.8 2.9 1.5 1.9 6 248E-13 7 Example 3 8.2 8.3 0 6 248 7.4 4.2 1.8 6 248.2 E-13 6 Example 410.3 10.1 0 6 246.4 9.3 5.1 1.8 6 246.6 E-13 6 Example 5 14.3 14.5 0 6245.9 12.9 7.3 1.8 6 246.1 E-13 6 Example 6 20.6 20.8 0 6 245.6 18.510.4 1.8 6 245.8 E-13 6 Example 7 16.8 17.0 0 6, 4 244.6 15.1 8.5 1.8 6,4 244.8 E-13 6 Example 8 26.4 26.9 0 6, 4 243.8 23.8 13.5 1.8 6, 4 244E-13 6 Example 9 1.6 1.6 0 4 243 1.4 1.3 2.7 4 243.2 E-12 8 Example 103.2 2.1 0 4 242.2 2.9 1.1 2.7 4 242.4 E-13 7 Example 11 6.1 4.1 0 6, 4244.2 5.5 2.0 2.7 6, 4 244.4 E-13 6 Example 12 10.5 7.0 0 6, 4 244 9.53.5 2.7 6, 4 244.2 E-13 6 Example 13 0.8 0.8 7.2 6 246.6 0.7 0.4 1.8 6247 E-13 8 Example 14 0.8 0.8 2.0 6 247.1 0.7 0.4 1.8 6 247.5 E-13 8Example 15 0.8 0.8 0.4 6 247.4 0.7 0.4 1.8 6 247.8 E-13 9 Example 16 0.80.8 4.3 6 247.6 0.7 0.4 1.8 6 248 E-13 8 Example 17 0.8 0.8 8.1 6 246.30.7 0.4 1.8 6 246.7 E-13 8 Example 18 0.8 0.8 0.7 6 247.0 0.7 0.4 1.8 6247.4 E-13 8 Example 19 0.8 0.8 0.4 6 246.5 0.7 0.4 1.8 6 246.9 E-13 8Example 20 0.8 0.8 2.2 6 246.8 0.7 0.4 1.8 6 247.2 E-12 9 Example 21 0.80.8 1.8 6 247.4 0.7 0.4 1.8 6 247.8 E-12 9 Example 22 0.8 0.8 3.4 6247.7 0.7 0.4 1.8 6 248.1 E-12 9 Example 23 0.8 0.8 2.0 6 246.5 0.7 0.41.8 6 246.9 E-12 9 Example 24 0.8 0.8 1.6 6 247.3 0.7 0.4 1.8 6 247.7E-12 9 Comparative 3.1 2.9 0 3 241.1 3.0 1.6 1.9 3 241.4 E-9  4 Example1 Comparative 2.9 2.8 0 3 241.3 2.8 1.4 2.0 3 241.5 E-9  4 Example 2Comparative 3.0 3.2 0 3 240.8 3.1 1.4 2.2 3 241.1 E-9  4 Example 3

Examples 9 to 12

1. Preparation of Powder Raw Materials

A tungsten oxide powder (denoted as “W” in Table 1) having a type andmedian particle size d50 shown in Table 1 and having a purity of 99.99mass %, a ZnO powder (denoted as “Z” in Table 1) having median particlesize d50 of 1.0 μm and having a purity of 99.99 mass %, and an In₂O₃powder (denoted as “1” in Table 1) having median particle size d50 of1.0 μm and having a purity of 99.99 mass % were prepared.

2. Preparation of Primary Mixture of Raw Material Powders

First, among the prepared raw material powders, the tungsten oxidepowder and the ZnO powder were put into a ball mill, and were pulverizedand mixed for 18 hours to prepare a primary mixture of the raw materialpowders. A molar mixing ratio between the tungsten oxide powder and theZnO powder was set at tungsten oxide powder:ZnO powder=3:2. Ethanol wasused as a dispersion medium at the time of pulverization and mixingdescribed above. The obtained primary mixture of the raw materialpowders was dried in the atmosphere.

3. Formation of Calcined Powder by Calcining Primary Mixture

Next, the obtained primary mixture of the raw material powders was putinto a crucible made of alumina, and was calcined for 5 hours at atemperature of 950° C. in an air atmosphere. In this way, a calcinedpowder including the Zn₂W₃O₈ type phase as a crystal phase was obtained.

4. Preparation of Secondary Mixture of Raw Material Powders IncludingCalcined Powder

Next, the obtained calcined powder was put into a pot together with theIn₂O₃ powder which was the prepared raw material powder, and further wasput into a pulverizing and mixing ball mill, and was pulverized andmixed for 12 hours to prepare a secondary mixture of the raw materialpowders. A mixing amount of the In₂O₃ powder was set such that a molarmixing ratio among the tungsten oxide powder, the ZnO powder and theIn₂O₃ powder was as shown in Table 1. Ethanol was used as a dispersionmedium at the time of pulverization and mixing described above. Theobtained mixed powder was dried by spray drying.

5. Formation of Molded Body by Molding Secondary Mixture

Next, by using the obtained secondary mixture, a disk-shaped molded bodyhaving a diameter of 100 mm and a thickness of about 9 mm was obtainedsimilarly to the case of Examples 1 to 8.

6. Formation of Oxide Sintered Body by Sintering Molded Body

Next, the obtained molded body was fired for 8 hours in the airatmosphere at the firing temperatures shown in Examples 9 to 12 inTable 1. An oxide sintered body including a bixbite type crystal phase(In₂O₃ type phase) having tungsten and zinc solid-dissolved therein wasthus obtained.

7. Evaluation of Properties of Oxide Sintered Body

Similarly to Examples 1 to 8, the crystal phases were identified byconducting crystal analysis by the powder X-ray diffraction method. Thecrystal phases present in the oxide sintered body were shown in Table 1.In addition, by the method similar to that in Examples 1 to 8, it wasconfirmed that each of the oxide sintered bodies in Examples 9 to 12 wasmainly composed of the In₂O₃ type crystal phase which is the bixbitetype crystal phase.

In addition, similarly to Examples 1 to 8, the W content rate and the Zncontent rate in the oxide sintered body, the apparent density, thevalence of tungsten, and the W bonding energy were measured. The resultwas shown in Table 2.

8. Fabrication of Target

Similarly to the case of Examples 1 to 8, the obtained oxide sinteredbody was processed into a target having a diameter of 3 inches (76.2 mm)and a thickness of 5.0 mm.

9. Fabrication of Semiconductor Device

Similarly to the case of Examples 1 to 8, a TFT which is a semiconductordevice was fabricated.

10. Evaluation of Characteristics of Semiconductor Device

Similarly to the case of Examples 1 to 8, the OFF current and the ratioof the value of the ON current to the value of the OFF current weremeasured. The result was shown in Table 2.

In addition, similarly to Examples 1 to 8, the W content rate and the Zncontent rate in oxide semiconductor film 14, the W/Zn atomic ratio, thevalence of tungsten included in oxide semiconductor film 14, and the Wbonding energy of tungsten included in oxide semiconductor film 14 weremeasured. The result was shown in Table 2.

Examples 13 to 24

An oxide sintered body including a bixbite type crystal phase (In₂O₃type phase) that has tungsten and zinc solid-dissolved therein andfurther includes element M was fabricated similarly to Examples 1 to 12,except that an oxide powder (Al₂O₃, TiO₂, Cr₂O₃, Ga₂O₃, HfO₂, SiO₂,V₂O₅, Nb₂O₃, ZrO₂, MoO₂, Ta₂O₃, Bi₂O₃) including element M shown inTable 1 was added as a raw material powder, in addition to the calcinedpowder and the In₂O₃ powder, when the secondary mixture of the rawmaterial powders was prepared. The M content rate in the oxide sinteredbody was shown in Table 2. Each of the oxide sintered bodies in Examples13 to 24 was mainly composed of the In₂O₃ type crystal phase which isthe bixbite type crystal phase. The obtained oxide sintered body wasprocessed into a target, and a TFT which is a semiconductor deviceincluding an oxide semiconductor film formed by the DC magnetronsputtering method by using this target was fabricated similarly toExamples 1 to 12.

The properties of the obtained oxide sintered body and oxidesemiconductor film as well as the characteristics of the TFT which isthe semiconductor device were shown in Tables 1 and 2. The methods formeasuring the properties and the characteristics were similar to thosein Examples 1 to 12,

Comparative Examples 1 to 3

An oxide sintered body was fabricated similarly to Examples 1 to 8 orExamples 9 to 12, except that when the oxide sintered body wasfabricated, the mixture of the raw material powders was prepared andthereafter the mixture of the raw material powders was molded andsintered without being calcined. The obtained oxide sintered body wasprocessed into a target, and a TFT which is a semiconductor deviceincluding an oxide semiconductor film formed by the DC magnetronsputtering method by using this target was fabricated similarly toExamples. Since the mixture of the raw material powders was molded andsintered without being calcined, it was confirmed that a complex oxidecrystal phase was not generated. Each of the oxide sintered bodies inComparative Examples 1 to 3 had an apparent density of equal to or lowerthan 6.5 g/cm³. Comparative Examples 1 to 3 are different from oneanother in terms of a molar mixing ratio among the WO_(2.72) powder orthe WO₂ powder, the ZnO powder or the SnO₂ powder, and the In₂O₂ powder.

The properties of the obtained oxide sintered body and oxidesemiconductor film as well as the characteristics of the TFT which isthe semiconductor device were shown in Table 2. The methods formeasuring the properties and the characteristics were similar to thosein Examples.

Examples 25 to 28

An oxide sintered body including a bixbite type crystal phase (In₂O₃type phase) that has tungsten and zinc solid-dissolved therein andfurther includes element M was fabricated similarly to Examples 1 to 12,except that an oxide powder (TiO₂, SiO₂) including element M shown inTable 3 was added as a raw material powder, in addition to the calcinedpowder and the In₂O₃ powder, when the secondary mixture of the rawmaterial powders was prepared. The M content rate in the oxide sinteredbody and an atomic ratio of element M to In (M/In ratio) were shown inTable 3. Each of the oxide sintered bodies in Examples 25 to 28 wasmainly composed of the In₂O₃ type crystal phase which is the bixbitetype crystal phase. The obtained oxide sintered body was processed intoa target, and a TFT which is a semiconductor device including an oxidesemiconductor film formed by the DC magnetron sputtering method by usingthis target was fabricated similarly to Examples 1 to 12.

The properties of the obtained oxide sintered body and oxidesemiconductor film as well as the characteristics of the TFT which isthe semiconductor device were shown in Table 3. The methods formeasuring the properties and the characteristics were similar to thosein Examples 1 to 12.

In addition, as for Examples 25 to 28, the electric resistivity of theoxide semiconductor film was measured in accordance with the followingprocedure. First, the oxide semiconductor film was formed similarly tothe method described in “9. Fabrication of Semiconductor Device, (3)Formation of Oxide Semiconductor Film” for Examples 1 to 8 (etchingafter formation of the oxide semiconductor film was not performed). Theelectric resistivity of the obtained oxide semiconductor film wasmeasured by the four-terminal method. At this time, Mo electrodes wereformed as electrode members by the sputtering method such that aninterval between the electrodes was 10 mm. Then, a voltage between theinner electrodes was measured while a voltage of −40 V to +40 V wasswept to the outer electrodes and a current was passed. The electricresistivity was thus calculated. The result was shown in Table 3. Inorder to set the electric resistivity to be equal to or higher than1×10² Ωcm that allowed use as an oxide semiconductor, it was preferablethat the ratio of Si/In atomic number was lower than 0.007 when addedelement M was Si, and it was preferable that the ratio of Ti/In atomicnumber was lower than 0.004 when added element M was Ti. As the electricresistivity increased, the OFF current tended to decrease and the TFTcharacteristics tended to be enhanced. When the electric resistivity waslower than 1×10² Ωcm, the OFF current tended to be high.

TABLE 3 Raw Material Powders Calci- Oxide Sintered Body W nationCalcined Sintering Presence or Molar Mixing Ratio Particle Temper-Complex Temper- Apparent Crystal Absence of W Z I M W M Size ature Oxideature Density Phase Solid (%) (%) (%) (%) Type Type μm ° C. Type ° C.(g/cm³) Present Solution Example 25 4.8 4.8 88.0 2.4 WO_(2.72) Ti 0.8650 ZnWO₄ 1175 6.85 In₂O₃ present Example 26 4.8 4.8 89.8 0.6 WO_(2.72)Ti 0.8 650 ZnWO₄ 1175 6.85 In₂O₃ present Example 27 4.8 4.8 89.4 1.0WO_(2.72) Si 0.8 650 ZnWO₄ 1175 6.80 In₂O₃ present Example 28 4.8 4.890.2 0.2 WO_(2.72) Si 0.8 650 ZnWO₄ 1175 6.85 In₂O₃ present TFT OxideSintered Body Oxide Semiconductor Film Characteristics W Zn M W W Zn WON Cur- Con- Con- Con- Bond- Con- Con- Bond- rent/OFF Electric tent tenttent M/In W ing tent tent W/Zn W ing OFF Current Resis- Rate Rate RateAtomic Va- Energy Rate Rate Atomic Va- Energy Current Ratio tivity (at.%) (at. %) (at. %) Ratio lence (eV) (at. %) (at. %) Ratio lence (cV) (A)(digit) (Ωm) Example 25 0.8 0.8 1.2 0.012 6 246.1 0.7 0.4 1.8 6 246.5 6× 10⁻⁸  8 10 Example 26 0.8 0.8 0.3 0.003 6 246.1 0.7 0.4 1.8 6 246.5 1× 10⁻¹³ 8 8 × 10² Example 27 0.8 0.8 0.5 0.005 6 245.8 0.7 0.4 1.8 6246.2 1 × 10⁻¹³ 8 8 × 10² Example 28 0.8 0.8 1.0 0.010 6 246.1 0.7 0.41.8 6 246.5 6 × 10⁻⁸  8 10

It should be understood that the embodiments and examples disclosedherein are illustrative and non-restrictive in every respect. The scopeof the present invention is defined by the terms of the claims, ratherthan the description above, and is intended to include any modificationswithin the meaning and scope equivalent to the terms of the claims.

REFERENCE SIGNS LIST

-   -   10 semiconductor device, 11 substrate, 12 gate electrode, 13        gate insulating film, 14 oxide semiconductor film, 14 c channel        portion, 14 d drain electrode forming portion, 14 s source        electrode forming portion, 15 source electrode, 16 drain        electrode.

The invention claimed is:
 1. A semiconductor device, wherein thesemiconductor device is a thin-film transistor, the semiconductor devicecomprises an oxide semiconductor film as a channel layer, the oxidesemiconductor film comprises indium, tungsten and zinc, an electricresistivity of the oxide semiconductor film is equal to or higher than1×10² Ωcm, a content rate of tungsten to a total of indium, tungsten andzinc in said oxide semiconductor film is higher than 1.2 atomic % andlower than 30 atomic %, and a content rate of zinc to the total ofindium, tungsten and zinc in said oxide semiconductor film is higherthan 1.2 atomic % and lower than 30 atomic.
 2. The semiconductor deviceaccording to claim 1, wherein an atomic ratio of tungsten to zinc insaid oxide semiconductor film is higher than 0.5 and lower than 3.0. 3.The semiconductor device according to claim 1, wherein an atomic ratioof silicon to indium in said oxide semiconductor film is lower than0.007.
 4. The semiconductor device according to claim 1, wherein anatomic ratio of titanium to indium in said oxide semiconductor film islower than 0.004.
 5. The semiconductor device according to claim 1,wherein said oxide semiconductor film includes tungsten having at leastone of valences of six and four.
 6. The semiconductor device accordingto claim 1, wherein said oxide semiconductor film includes tungstenwhose bonding energy measured by X-ray photoelectron spectroscopy isequal to or higher than 245 eV and equal to or lower than 250 eV.
 7. Thesemiconductor device according to claim 1, wherein the oxidesemiconductor film further comprises at least one type of elementselected from the group consisting of aluminum, titanium, chromium,gallium, hafnium, zirconium, silicon, molybdenum, vanadium, niobium,tantalum, and bismuth, and a content rate of said element to a total ofindium, tungsten, zinc, and said element in the oxide semiconductor filmis equal to or higher than 0.1 atomic % and equal to or lower than 10atomic %.